EGP30A(2007) データシートの表示（PDF） - Vishay Semiconductors
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EGP30A Datasheet PDF : 4 Pages
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EGP30A thru EGP30G
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.2
EGP30A - EGP30D
EGP30F & EGP30G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
210
TJ = 25 °C
180
f = 1.0 MHz
Vsig = 50 mVp-p
150
120
90
60
30
0
0
EGP30A - EGP30D
EGP30F & EGP30G
1
10
100
Reverse Voltage (V)
1000
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GP20
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.042 (1.07)
0.037 (0.94)
DIA.
1.0 (25.4)
MIN.
Document Number: 88584 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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