ES1A データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.
部品番号
コンポーネント説明
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ES1A
Shenzhen Jin Yu Semiconductor Co., Ltd.
ES1A Datasheet PDF : 3 Pages
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ES1A THRU ES1M
F•eFaotruSurrefasceMount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 15 °C/W Junction To Lead
Catalog
Number
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
Device
Marking
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
ES1M
ES1M
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES1A-D
ES1G-K
ES1M
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IF(AV)
IFSM
VF
IR
1.0A
30A
TJ = 75°C
8.3ms, half sine
.975V
1.35V
1.60V
IFM = 1.0A;
TJ = 25°C*
5µA TJ = 25°C
100µA TJ = 100°C
Maximum Reverse
Recovery Time
ES1A-D
ES1G-K
Trr
ES1M
Typical Junction
CJ
Capacitance
50ns
60ns
100ns
45pF
IF=0.5A, IR=1.0A,
Irr=0.25A
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.067
.089
C
.002
.008
D
---
.02
E
.035
.055
F
.065
.096
G
.205
.224
H
.160
.180
J
.100
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
B
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
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