ES1SERIES データシートの表示（PDF） - Philips Electronics

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ES1SERIES

SMA ultra fast low-loss controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

SMA ultra fast low-loss

controlled avalanche rectifiers

Product specification

ES1 series

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

trr

reverse recovery time

Cd

diode capacitance

CONDITIONS

TYP.

IF = 1 A; see Fig.4

−

VR = VRRMmax; see Fig.5

−

VR = VRRMmax; Tj = 165 °C; see Fig.5

−

when switched from IF = 0.5 A to IR = 1 A; −

measured at IR = 0.25 A; see Fig.9

VR = 4 V; f = 1 MHz; see Fig.6

19

MAX.

1.1

5

100

25

UNIT

V

µA

µA

ns

−

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point; see Fig.7

thermal resistance from junction to ambient

CONDITIONS

note 1

note 2

VALUE

27

100

150

UNIT

K/W

K/W

K/W

Notes

1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more

information please refer to the ‘General Part of associated Handbook’.

2000 Feb 14

3

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