FC40SA50FK データシートの表示（PDF） - International Rectifier
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FC40SA50FK Datasheet PDF : 8 Pages
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I27139- 01/03
FC40SA50FK
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500 – –
V VGS = 0V, ID = 250µA
– 0.60 – V/°C Reference to 25°C, ID = 1mA(
– 0.084 0.10 Ω VGS = 10V, ID = 24A %
3.0 – 5.0 V VDS = VGS, ID = 250µA
–
– 50 µA VDS = 500V, VGS = 0V
– – 250
VDS = 400V, VGS = 0V, TJ = 125°C
–
– 250 nA VGS = 30V
– – -250
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
23 – –
– – 270
– – 84
– – 130
– 25 –
– 140 –
– 55 –
– 74 –
– 8310 –
– 960 –
– 120 –
– 10170 –
– 240 –
– 440 –
S VDS = 50V, ID = 28A
ID = 40A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 %
VDD = 250V
ns ID = 40A
RG = 1.0Ω
VGS = 10V,See Fig. 10 %
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V '
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) "
– – 40
MOSFET symbol
D
showing the
–
– 160
A integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––1
V TJ = 25°C, IS = 40A, VGS = 0V %
– 620 940 ns TJ = 25°C, IF = 47A
di/dt = 100A/µs %
µC
– 14 21
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Notes:
" Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
$ Starting TJ = 25°C, L = 1.55mH, RG = 25Ω,
IAS = 40A, dv/dt =5.5V/ns (See Figure 12a)
# ISD ≤ 40A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
– 38 -
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
% Pulse width ≤ 300µs; duty cycle ≤ 2%.
' Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
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