FC40SA50FKP データシートの表示（PDF） - Vishay Semiconductors
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FC40SA50FKP Datasheet PDF : 10 Pages
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Power MOSFET, 40 A
FC40SA50FKP
Vishay Semiconductors
DIODE CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
SYMBOL
IS
Pulsed source current (body diode)
ISM (1)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Forward turn-on time
VSD (2)
trr (2)
Qrr
IRRM
ton
TEST CONDITIONS
MIN. TYP. MAX.
MOSFET symbol
showing the integral reverse
G
p-n junction diode
D
-
-
S
-
40
-
160
TJ = 25 °C, IS = 40 A, VGS = 0 V
-
-
1
TJ = 25 °C, IF = 47 A; dI/dt = 100 A/μs
-
620
940
-
14
21
TJ = 25 °C
-
38
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2) Pulse width ≤ 300 μs; duty cycle ≤ 2 %
UNITS
A
V
ns
μC
A
1000
100
10
TO P
VG S
15
10
8.0
7.0
6.0
5.5
B O TTO M 5.0
1
5V
0.1
20 μs PULSE WIDTH
TJ=25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100
10
VGS
TO P
15
10
8.0
7.0
6.0
5.5
5.0
B O TTO M 4.5
4.5 V
1
20 μs PULSE
WIDTH
0.1
T 150°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
TJ=150°C
10
TJ=25°C
1
V DS=20V
20μs PULSE WIDTH
0.1
4
5
6
7
8
9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.5
3.0
ID=24A
2.5
2.0
1.5
1.0
V GS=10V
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 94542 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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