SD1460 データシートの表示（PDF） - STMicroelectronics

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SD1460

RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS

STMicroelectronics 

SD1460

Table 2. Absolute Maximum Ratings (Tcase = 25°C)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VCES

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Device Current

PDISS

Power Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

Value

Unit

60

V

25

V

60

V

4.0

V

16

A

230

W

+200

°C

– 65 to +150

°C

Table 3. Thermal Data

Symbol

) RTH(j-c)

Parameter

Junction-Case Thermal Resistance

duct(s ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

Pro Table 4. Static

te Symbol

Test Conditions

sole BVCBO

b BVCER

- O BVCEO

t(s) BVEBO

c hFE

IC = 100 mA; IE = 0 mA

IC = 100 mA; RBE = 10 Ω

IC = 100 mA; IB = 0 mA

IE = 20 mA; IC = 0 mA

VCE = 5 V; IC = 1 A

rodu Table 5. Dynamic

P Symbol

Test Conditions

lete POUT

oGP

Obsηc

f = 108 MHz; PIN = 18 W; VCE = 28 V

f = 108 MHz; PIN = 18 W; VCE = 28 V

f = 108 MHz; PIN = 18 W; VCE = 28 V

Value

0.75

Unit

°C/W

Min.

60

55

25

4.0

20

Value

Typ.

—

—

—

—

—

Max.

—

—

—

—

150

Unit

V

V

V

V

—

Min.

150

9.2

70

Value

Typ.

—

—

—

Max.

—

—

—

Unit

W

dB

%

COB

f = 1 MHz; VCB = 28 V

—

—

150

pF

2/7

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