FY4ADJ-03A データシートの表示（PDF） - Renesas Electronics
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FY4ADJ-03A Datasheet PDF : 5 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
TC = 25°C
Pulse Test
–1.6
–1.2
–0.8
–0.4
0
0
ID = –8A
–4A
–2A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
TC = 25°C
VDS = –10V
Pulse Test
–16
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
103
Ciss
7
5
4
3
Coss
2
102
7
5
4
3
2 TCh = 25°C
f = 1MHZ
101 VGS = 0V
–10–1 –2 –3 –4 –5 –7–100
Crss
–2 –3 –4 –5 –7–101
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
VGS = –4V
160
120
80
–10V
40
0
–10–1 –2 –3 –5–7 –100 –2 –3 –5–7–101 –2 –3 –5–7 –102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
VDS = –10V
7 Pulse Test
5
4
3
2
TC = 25°C
75°C
101
125°C
7
5
4
3
2
10–0100 –2 –3 –4 –5 –7–101 –2 –3 –4 –5 –7–102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
102
7
td(off)
5
4
3
tf
2
td(on)
101
7
5
tr
4
3 TCh = 25°C
2 VDD = –15V
VGS = –10V
100 RGEN = RGS = 50Ω
–10–1 –2 –3 –4 –5 –7–100
–2 –3 –4 –5 –7–101
DRAIN CURRENT ID (A)
Sep. 2001
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