FZT849 データシートの表示（PDF） - TY Semiconductor

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FZT849

NPN Silicon Planar High Current (High Performance) Transistor

TY Semiconductor 

Product specification

FZT849

Features

Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A.

7 Amp continuous collector current (20 Amp peak).

Very low saturation voltages.

Excellent gain charateristics specified upto 20 Amp.

Ptot = 3 Watts.

SOT-223

6.50+0.2

-0.2

3.00+0.1

-0.1

4

Unit: mm

3.50+0.2

-0.2

0.90+0.2

-0.2

7.00+0.3

-0.3

1

2

3

2.9

4.6

0.70+0.1

-0.1

1 base

2 collector

3 emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Symbol

Rating

Unit

VCBO

80

V

VCEO

30

V

VEBO

6

V

IC

7

A

Continuous collector current

Power dissipation

Operating and storage temperature range

ICM

20

A

Ptot

3

W

Tj,Tstg

-55 to +150

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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