FZT849 データシートの表示（PDF） - TY Semiconductor

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FZT849

NPN Silicon Planar High Current (High Performance) Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector Cut-Off Current

Collector Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-Emitter Turn-On Voltage *

Static Forward Current Transfer Ratio

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Marking

Marking

FZT849

Symbol

Testconditons

V(BR)CBO IC=100ìA

V(BR)CEO IC=10mA

V(BR)EBO IE=100ìA

ICBO

VCB=70V

VCB=70V,Ta = 100

IEBO VEB=6V

IC=0.5A, IB=20mA

VCE(sat) IC=1A, IB=20mA

IC=2A, IB=20mA

IC=6.5A, IB=300mA

VBE(sat) IC=6.5A, IB=300mA

VBE(on) IC=6.5A, VCE=1V

IC=10mA, VCE=1V

IC=1A, VCE=1V*

hFE

IC=7A, VCE=1V*

IC=20A, VCE=2V*

fT IC=100mA, VCE=10V f=50MHz

Cobo VCB=10V, f=1MHz

t(on) IC=1A, VCC=10V

t(off) IB1=IB2=100mA

Transistors

Product specification

FZT849

Min Typ Max Unit

80 120

V

30 40

V

6

8

V

50 nA

1 ìA

10 nA

35 50

67

168

110

215

mV

350

1.2 V

1.13 V

100 200

100 200 300

100 150

30 65

100

MHz

75

pF

45

ns

630

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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