H9435S データシートの表示（PDF） - Hi-Sincerity Microelectronics

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H9435S

P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200509

Issued Date : 2005.10.01

Revised Date : 2005.10.06

Page No. : 1/4

H9435S

P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

•

8-Lead Plastic SO-8

Package Code: S

Features

• RDS(on)=60mΩ@VGS=-10V, ID=-5.3A

• RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Fully Characterized Avalanche Voltage and Current

• Improved Shoot-Through FOM

H9435S Symbol & Pin Assignment

5

4

6

3 Pin 1 / 2 / 3: Source

Pin 4: Gate

7

2 Pin 5 / 6 / 7 / 8: Drain

8

1

Absolute Maximum Ratings (TA=25oC, unless otherwise noted)

Symbol

Parameter

VDS

VGS

ID

IDM

PD

Tj, Tstg

RθJC

RθJA

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous)

Drain Current (Pulsed) *1

Total Power Dissipation @TA=25oC

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient (PCB mounted)*2

*1: Maximum DC current limited by the package

*2: 1-in2 2oz Cu PCB board

Ratings

-30

±20

-5.3

-20

2.5

-55 to +150

30

50

Units

V

V

A

A

W

°C

°C/W

°C/W

H9435S

HSMC Product Specification

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