HIT647TZ-EQ データシートの表示（PDF） - Renesas Electronics

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HIT647TZ-EQ

Silicon PNP Epitaxial

Renesas Electronics 

HIT647

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

-120

—

—

V IC = -100 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO -100

—

—

V IC = -10 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

-6

—

—

V IE = -100 µA, IC = 0

Collector cutoff current

ICBO

—

—

-500

nA VCB = -120 V, IE = 0

Emitter cutoff current

IEBO

—

—

-500

nA VEB = -6 V, IC = 0

DC current transfer ratio

hFE1

140

—

350

— VCE = -2 V, IC = -150 mA

hFE2

40

—

—

— VCE = -5 V, IC = -1 A

Collector to emitter saturation voltage

VCE(sat)

—

—

-0.5

V IC = -500 mA, IB = -50 mA

Base to emitter saturation voltage

VBE(sat)

—

—

-1.1

V IC = -500 mA, IB = -50 mA

Rev.2.00 Mar 05, 2007 page 2 of 4

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