HEC4750VF データシートの表示（PDF） - Philips Electronics
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HEC4750VF Datasheet PDF : 17 Pages
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Philips Semiconductors
Frequency synthesizer
Product specification
HEF4750V
LSI
AC CHARACTERISTICS
General note
The dynamic specifications are given for the circuit built-up with external components as given in Fig.8, under the
following conditions; for definitions see note 1; for definitions of times see Fig.19; VDD = 10 V ± 5%; Tamb = 25 °C; input
transition times ≤ 20 ns; RA = 68 kΩ ± 30% (see also note 4); CA = 270 pF; CB = 150 pF; CC = 1 nF; CD = 10 nF; unless
otherwise specified.
Slew rate
TCA
TCA
TCB
TCB
Ramp linearity
TCA
TCB
Start of TCA-ramp delay
Delay of TCA-hold
Delay of TCA-discharge
Start of TCB-ramp delay
TCB-ramp duration
Required TCB min.
ramp duration
Pulse width
V : LOW
V : HIGH
R : LOW
R : HIGH
STB : LOW
STB : HIGH
Fall time
TCA
TCB
Prescaler input frequency
Binary divider frequency
Crystal oscillator frequency
Average power supply current
with speed-up 1 : 10
without speed-up
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS NOTES
STCA
STCA
STCB
STCB
ITCA
ITCB
tCBCA
tRCA
tVCA
tVCB
trCB
trCB
trCB
trCB
tPWVL
tPWVH
tPWRL
tPWRH
tPWSL
tPWSH
tfCA
tfCB
fPR
fDIV
fOSC
IP
IP
−
52
−
V/µs
RA = minimum
12
−
28
−
V/µs
RA = maximum
12
−
20
−
V/µs
RA = minimum
12
−
10
−
V/µs
RA = maximum
12
−
2
−
%
13
−
2
−
%
13
−
200 −
ns
−
40
−
ns
−
60
−
ns
−
60
−
ns
−
250 −
ns
VMOD = 4 V
−
350 −
ns
VMOD = 6 V
−
450 −
ns
VMOD = 8 V
−
150 −
ns
14
−
20
−
ns
−
20
−
ns
−
20
−
ns
−
20
−
ns
−
20
−
ns
−
20
−
ns
−
50
−
ns
−
50
−
ns
−
30
−
MHz all division ratios
−
30
−
MHz all division ratios
−
10
−
MHz
locked state
−
3,6 −
mA
15
−
3,2 −
mA
16
January 1995
11
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