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HEC4750VF データシートの表示(PDF) - Philips Electronics

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HEC4750VF
Philips
Philips Electronics Philips
HEC4750VF Datasheet PDF : 17 Pages
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Philips Semiconductors
Frequency synthesizer
In this way suitable comparison frequencies can be
obtained from a range of crystal frequencies. The divider
can also be used as a ‘stand alone’ programmable divider
by connecting input TRA to VDD, which causes all internal
analogue currents to be switched off.
Biasing circuitry
The biasing circuitry uses an external current source or
resistor, which has to be connected between the TRA and
VSS pins. This circuitry supplies all analogue parts of the
circuit. Consequently the analogue properties of the
device, such as gain, charge currents, speed, power
dissipation, impedance levels etc., are mainly determined
by the value of the input current at TRA. The TRA input
must be decoupled to VDD, as shown in Fig.7. The value of
CD has to be chosen such that the TRA input is ‘clean’, e.g.
10 nF at RA = 68 k.
Product specification
HEF4750V
LSI
Fig.7 Decoupling of input TRA.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage
VDD
Voltage on any input
VI
D.C. current into any input or output
±I
Power dissipation per package
for Tamb = 0 to + 85 °C
Power dissipation per output
for Tamb = 0 to 85 °C
Storage temperature
Operating ambient temperature
Ptot
P
Tstg
Tamb
0,5 to + 15 V
0,5 to VDD + 0,5 V
max.
10 mA
max.
500 mW
max.
100 mW
65 to + 150 °C
40 to + 85 °C
January 1995
8

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