HSB276AS データシートの表示（PDF） - Renesas Electronics

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HSB276AS

Silicon Schottky Barrier Diode for Balanced Mixer

Renesas Electronics 

HSB276AS

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Note: 1. Per one device

VRRM

VR

IO *1

Tj

Tstg

Symbol

Value

5

3

30

125

−55 to +125

(Ta = 25°C)

Unit

V

V

mA

°C

°C

Electrical Characteristics *1

Item

Symbol Min

Typ

Reverse voltage

VR

3

—

Reverse current

IR

—

—

Forward current

IF

35

—

Capacitance

C

—

—

Capacitance deviation ∆C

ESD-Capability *2

—

—

—

30

—

Notes: 1. Per one device

2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V

Max

—

50

—

0.90

0.10

—

(Ta = 25°C)

Unit

Test Condition

V

IR = 1 mA

µA VR = 0.5 V

mA VF = 0.5V

pF VR = 0.5 V, f = 1 MHz

pF VR = 0.5 V, f = 1 MHz

V C = 200 pF, R = 0 Ω , Both forward and

reverse direction 1 pulse.

Rev.1.00 Apr 06, 2005 page 2 of 4

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