HSM88AS データシートの表示（PDF） - Renesas Electronics

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HSM88AS

Silicon Schottky Barrier Diode for Balanced Mixer

Renesas Electronics 

HSM88AS

Absolute Maximum Ratings

(Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Note: 1. Per one device

Symbol

VR

IO *1

Tj

Tstg

Value

Unit

10

V

15

mA

125

°C

–55 to +125

°C

Electrical Characteristics *1

(Ta = 25°C)

Item

Symbol Min Typ

Forward voltage

Reverse current

Capacitance

VF1

0.35 —

VF2

0.50 —

IR1

——

IR2

——

C

——

Capacitance deviation

∆C

——

Forward voltage deviation ∆VF

ESD-Capability *2

—

——

30 —

Notes: 1. Per one device

2. Failure criterion ; IR ≥ 0.4 µA at VR = 2 V

Max

0.42

0.58

0.2

10

0.85

0.10

10

—

Unit

V

µA

pF

pF

mV

V

Test Condition

IF = 1 mA

IF = 10 mA

VR = 2 V

VR = 10 V

VR = 0 V, f = 1 MHz

VR = 0 V, f = 1 MHz

IF = 10 mA

C = 200 pF, R = 0 Ω , Both forward

and reverse direction 1 pulse.

Rev.6.00, Nov.06.2003, page 2 of 4

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