HY27UF084G2M データシートの表示（PDF） - Hynix Semiconductor

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HY27UF084G2M

4Gbit (512Mx8bit) NAND Flash

Hynix Semiconductor 

HY27UF084G2M Series

4Gbit (512Mx8bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

NAND INTERFACE

- x8 width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

SUPPLY VOLTAGE

- 3.3V device: VCC = 2.7 to 3.6V : HY27UF084G2M

Memory Cell Array

= (2K+ 64) Bytes x 64 Pages x 4,096 Blocks

PAGE SIZE

- x8 device : (2K + 64 spare) Bytes

: HY27UF084G2M

BLOCK SIZE

- x8 device: (128K + 4K spare) Bytes

PAGE READ / PROGRAM

- Random access: 25us (max.)

- Sequential access: 30ns (min.)

- Page program time: 200us (typ.)

STATUS REGISTER

ELECTRONIC SIGNATURE

- 1st cycle : Manufacturer Code

- 2nd cycle: Device Code

CHIP ENABLE DON'T CARE

- Simple interface with microcontroller

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

- Program/Erase locked during Power transitions

DATA INTEGRITY

- 100,000 Program/Erase cycles (with 1bit/512byte ECC)

- 10 years Data Retention

PACKAGE

- HY27UF084G2M-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27UF084G2M-T (Lead)

- HY27UF084G2M-TP (Lead Free)

- HY27UF084G2M-UP

: 52-ULGA (12 x 17 x 0.65 mm)

- HY27UF084G2M-UP (Lead Free)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

CACHE PROGRAM MODE

- Internal Cache Register to improve the program

throughput

FAST BLOCK ERASE

- Block erase time: 2ms (Typ.)

Rev. 0.7 / Dec. 2006

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