HY57V121620T-6 データシートの表示（PDF） - Hynix Semiconductor

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HY57V121620T-6

4 Banks x 8M x 16Bit Synchronous DRAM

Hynix Semiconductor 

HY57V121620(L)T

DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)

Parameter

Symbol

Test Condition

Speed

Unit Note

-6 -K -H -8 -P -S

Operating Current

IDD1

Burst length=1, One bank active

tRC ≥ tRC(min), IOL=0mA

160 150 150 140 140 140 mA 1

Precharge Standby Current IDD2P CKE ≤ VIL(max), tCK = 15ns

in Power Down Mode

IDD2PS CKE ≤ VIL(max), tCK = ∞

2

mA

2

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

IDD2N Input signals are changed one time during

30

Precharge Standby Current

in Non Power Down Mode

30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V

mA

IDD2NS CKE ≥ VIH(min), tCK = ∞

10

Input signals are stable.

Active Standby Current

in Power Down Mode

IDD3P CKE ≤ VIL(max), tCK = 15ns

IDD3PS CKE ≤ VIL(max), tCK = ∞

4

mA

4

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

IDD3N Input signals are changed one time during

50

Active Standby Current

in Non Power Down Mode

30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V

mA

IDD3NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

35

Burst Mode Operating

Current

IDD4

tCK ≥ tCK(min), IOL=0mA

All banks active

210 200 200 190 190 190 mA 1

Auto Refresh Current

IDD5 tRRC ≥ tRRC(min), All banks active

310 300 300 290 290 290 mA 2

Self Refresh Current

IDD6 CKE ≤ 0.2V

6

mA 3

3

mA 4

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3.HY57V121620T-6/K/H/8/P/S

4.HY57V121620LT-6/K/H/8/P/S

Rev.0.3/Dec. 01

6

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