HY57V641620HG-I データシートの表示（PDF） - Hynix Semiconductor
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HY57V641620HG-I Datasheet PDF : 12 Pages
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DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3VNote5, VSS=0V)
HY57V641620HG
Parameter
Symbol
Test Condition
Speed
Unit Note
-5I -55I -6I -7I -KI -HI -8I -PI -SI
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
100 95 90 85 85 85 80 80 80 mA 1
Precharge Standby
Current
in Power Down Mode
IDD2P CKE ≤ VIL(max), tCK = min
IDD2PS CKE ≤ VIL(max), tCK = ∞
2
mA
2
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= min
Precharge Standby
IDD2N
Current
in Non Power Down Mode
Input signals are changed one time
during 2clks. All other pins ≥ VDD-
0.2V or ≤ 0.2V
15
mA
IDD2NS CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
12
mA
Active Standby Current
in Power Down Mode
IDD3P
IDD3PS
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
6
mA
5
mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= min
IDD3N Input signals are changed one time
30
mA
Active Standby Current
during 2clks. All other pins ≥ VDD-
in Non Power Down Mode
0.2V or ≤ 0.2V
IDD3NS CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
20
mA
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA CL=3 170 160 150 150 150 150 120 120 120 mA 1
All banks active
CL=2 NA NA NA NA
120
mA
Auto Refresh Current
IDD5
tRRC ≥ tRRC(min), All banks active
160
mA 2
Self Refresh Current
IDD6
CKE ≤ 0.2V
1
mA 3
400
uA 4
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V641620HGT-5I/55I/6I/7I/KI/HI/PI/SI
4.HY57V641620HGLT-5I/55I/6I/7I/KI/HI/PI/SI
Rev. 1.0/Jan. 02
6
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