Q67100-Q1119 データシートの表示（PDF） - Siemens AG

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Q67100-Q1119

3.3V 4M x 4-Bit EDO-Dynamic RAM

Siemens AG 

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

AC Characteristics (cont’d) 5)6)

16E

TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

-70

min. max. min. max. min. max.

CAS precharge to RAS Delay

tRHPC 27 –

32 –

37 –

ns

Hyper Page Mode (EDO) Read-modify-Write Cycle

Hyper page mode (EDO) read- tPRWC 58 –

68 –

77 –

ns

write cycle time

CAS precharge to WE

tCPWD 41 –

49 –

56 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

10 –

10 –

10 –

ns

CAS hold time

tCHR

10 –

10 –

10 –

ns

RAS to CAS precharge time

tRPC

5

–

5

–

5

–

ns

Write to RAS precharge time

tWRP

10 –

10 –

10 –

ns

Write hold time referenced to RAS tWRH 10 –

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 –

40 –

40 –

ns

Self Refresh Cycle

RAS pulse width

RAS precharge

CAS hold time

tRASS

tRPS

tCHS

100k _

95 _

-50 _

100k _

110 _

-50 _

100k _

130 _

-50 _

ns 17

ns 17

ns 17

Test Mode

Write command setup time

Write command hold time

CAS hold time

tWTS

10 –

10 –

10 –

ns

tWTH

10 –

10 –

10 –

ns

tCHRT

30

–

30 –

30 –

ns

Semiconductor Group

10

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