HYB3116405BJ データシートの表示（PDF） - Siemens AG

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HYB3116405BJ

3.3V 4M x 4-Bit EDO-Dynamic RAM

Siemens AG 

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 °C

Storage temperature range.........................................................................................– 55 to 150 °C

Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V

Power supply voltage.................................................................................................- 0.5 V to 4.6 V

Power dissipation.................................................................................................................... 0.5 W

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may affect device

reliability.

DC Characteristics (values in brackets for HYB3117405)

TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol Limit Values

min.

max.

Unit Test

Condition

Input high voltage

Input low voltage

TTL Output high voltage (IOUT = – 2 mA)

TTL Output low voltage (IOUT = 2 mA)

VIH

2.0

Vcc+0.5 V 1)

VIL

– 0.5 0.8

V 1)

VOH

2.4

–

V 1)

VOL

–

0.4

V 1)

CMOS Output high voltage (IOUT = –100 uA) VOH

VCC-0.2 –

V

CMOS Output low voltage (IOUT = 100 uA)

VOL

–

0.2

Input leakage current

II(L)

(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)

– 10

10

Output leakage current

(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)

IO(L)

– 10

10

V

µA 1)

µA 1)

Average VCC supply current:

ICC1

-50 ns version

–

-60 ns version

–

-70 ns version

–

100(120) mA

90 (110) mA

80 (100) mA

2) 3) 4)

2) 3) 4)

2) 3) 4)

(RAS, CAS, address cycling, tRC = tRC min.)

Standby VCC supply current (RAS = CAS = VIH) ICC2

–

2

mA –

Semiconductor Group

6

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