HYB3116405BJ データシートの表示（PDF） - Siemens AG

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HYB3116405BJ

3.3V 4M x 4-Bit EDO-Dynamic RAM

Siemens AG 

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

DC Characteristics (values in brackets for HYB3117405)

TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

min.

max.

Unit Test

Condition

Average VCC supply current, during RAS-only ICC3

refresh cycles:

-50 ns version

–

-60 ns version

–

-70 ns version

–

100(120) mA 2) 4)

90 (110) mA 2) 4)

80 (100) mA 2) 4)

(RAS cycling: CAS = VIH, tRC = tRC min.)

Average VCC supply current, during hyper page ICC4

mode EDO):

-50 ns version

–

-60 ns version

–

-70 ns version

–

70 (70)

55 (55)

45 (45)

mA 2) 3) 4)

mA 2) 3) 4)

mA 2) 3) 4)

(RAS = VIL, CAS, address cycling, tPC = tPC min.)

Standby VCC supply current

(RAS = CAS = VCC – 0.2 V)

ICC5

–

Average VCC supply current, during CAS-

ICC6

before-RAS refresh mode: -50 ns version

–

-60 ns version

–

-70 ns version

–

1

mA 1)

200

µA L-version

100(120) mA 2) 4)

90 (110) mA 2) 4)

80 (100) mA 2) 4)

(RAS, CAS cycling, tRC = tRC min.)

Average Self Refresh Current

ICC7

_

(CBR cylce with tRAS>TRASSmin., CAS held low,

WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

1

mA

250

µA L-version

Capacitance

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V, f = 1 MHz

Parameter

Input capacitance (A0 to A10, A11)

Input capacitance (RAS, CAS, WE, OE)

I/O capacitance (I/O1 - I/O4)

Symbol

CI1

CI2

CIO

Limit Values

min.

max.

–

5

–

7

–

7

Unit

pF

pF

pF

Semiconductor Group

7

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