Q67100-Q1109 データシートの表示（PDF） - Siemens AG
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Q67100-Q1109 Datasheet PDF : 26 Pages
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HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
DC Characteristics( note : values in brackets for HYB5118165BSJ)
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Average VCC supply current,
ICC4
during hyper page mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS = VIL, CAS, address cycling:tPC = tPC min.)
Standby VCC supply current
(RAS = CAS = VCC – 0.2 V)
ICC5
–
Average VCC supply current, during CAS-
ICC6
before-RAS refresh mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS, CAS cycling: tRC = tRC min.)
Average Self Refresh Current
ICC7
_
70 (90) mA 2) 3) 4)
55 (75) mA
45 (60) mA
1
mA 1)
100(200) mA 2) 4)
90 (180) mA
80 (160) mA
1
mA
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc - 0.2V or 0.2V)
Capacitance
TA = 0 to 70 °C,VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A11)
CI1
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
I/O capacitance (I/O1-I/O16)
CIO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
7
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