HYM328020GD-60 データシートの表示（PDF） - Siemens AG

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HYM328020GD-60

8M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

Siemens AG 

HYM328020GD-50/-60

8M x 32 SO-DIMM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V

Parameter

Symbol Limit Values

min. max.

Average Vcc supply current,

ICC4

during fast page mode:

-50 ns version

–

340

-60 ns version

(RAS = VIL, CAS, address cycling: tPC=tPC min.)

–

300

Standby Vcc supply current

(RAS=CAS= Vcc-0.2V)

ICC5

–

800

Average Vcc supply current, during CAS-before- ICC6

RAS refresh mode:

-50 ns version

–

560

-60 ns version

–

480

(RAS, CAS cycling: tRC = tRC min.)

Self Refresh Current

ICC7

–

800

Average Power Supply Current during Self Refresh.

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

Unit Note

mA 3) 4) 5)

mA

A–

mA 3) 4)

mA

A

Semiconductor Group

199

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