HYM361140GS データシートの表示（PDF） - Siemens AG

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HYM361140GS

1M × 36-Bit Dynamic RAM Module (2M × 18-Bit Dynamic RAM Module)

Siemens AG 

HYM 361120/40S/GS-60/-70

1M × 36-Bit

AC Characteristics (cont’d) 4) 5)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

Limit Values

Unit

HYM

HYM

361120/40S/GS-60 361120/40S/GS-70

min.

max.

min.

max.

Column address to RAS lead time tRAL

30

–

35

–

ns

Read command setup time

tRCS

0

–

0

–

ns

Read command hold time

t 8)

RCH

0

–

0

–

ns

Read command hold time

tRRH

0

–

0

–

ns

ref. to RAS

8)

Write command hold time

tWCH

10

–

15

–

ns

Write command pulse width

tWP

10

–

15

–

ns

Write command to RAS lead time tRWL

15

–

20

–

ns

Write command to CAS lead time tCWL

15

–

20

–

ns

Data setup time

t 9 )

DS

0

–

0

–

ns

Data hold time

t 9 )

DH

15

–

15

–

ns

Refresh period

tREF

–

16

–

16

ms

Write command setup time

t 10)

WCS

0

–

0

–

ns

CAS setup time

t 13)

CSR

5

–

5

–

ns

CAS hold time

t 13)

CHR

15

–

15

–

ns

RAS to CAS precharge time

tRPC

0

–

0

–

ns

CAS precharge time

t 13)

CP

10

–

10

–

ns

Write to RAS precharge time

t 13)

WRP

10

–

10

–

ns

Write to time ref. to RAS

t 13)

WRH

10

–

10

–

ns

.

Semiconductor Group

598

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