IL755 データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
IL755
Vishay Semiconductors
IL755 Datasheet PDF : 8 Pages
| |||
IL755/ ILD755
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Power dissipation
Test condition
Derate linearly from 25 °C
Coupler
Parameter
Test condition
Isolation test voltage (PK)
t = 1.0 sec.
Total power dissipation (LED plus detector)
Derate linearly from 25 °C
Creepage
Clearance
Storage temperature
Operating temperature
Lead soldering time at 260 °C
Part
IL755-1
IL755-2
ILD755-1
ILD755-2
IL755-1
IL755-2
ILD755-1
ILD755-2
Part
IL755-1
IL755-2
ILD755-1
ILD755-2
IL755-1
IL755-2
ILD755-1
ILD755-2
Symbol
BVCEO
BVCBO
Pdiss
Pdiss
Pdiss
Pdiss
Value
60
60
200
200
150
150
2.6
2.6
2.0
2.0
Unit
V
V
mW
mW
mW
mW
mW/°C
mW/°C
mW/°C
mW/°C
Symbol
VISO
Ptot
Ptot
Ptot
Ptot
Tstg
Tamb
Value
7500/5300
250
250
400
400
3.0
3.0
3.0
3.0
≥7
≥7
- 55 to + 150
- 55 to + 100
10
Unit
VACPK/VRMS
mW
mW
mW
mW
mW/°C
mW/°C
mW/°C
mW/°C
mm
mm
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Test condition
Symbol
Min
Typ.
Max
Unit
IF = ± 10 mA
VF
1.2
1.5
V
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown voltage
IC = 1.0 mA
BVCEO
60
75
V
Collector-base breakdown voltage
IC = 10 µA
BVCBO
60
90
V
Collector-emitter leakage current
VCE = 10 V
ICEO
10
100
nA
www.vishay.com
2
Document Number 83641
Rev. 1.4, 26-Oct-04
Share Link: