IR53H420-P2 データシートの表示（PDF） - International Rectifier
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IR53H420-P2 Datasheet PDF : 8 Pages
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IR53H(D)420(-P2)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol Definition
VB
High side floating supply absolute voltage
VIN
High voltage supply
VO
Half-bridge output voltage
ID
Continuous drain current (TA = 25°C)
-P2
(TA = 85°C)
-P2
(TC = 25°C)
-P2
ICC
Supply current
TA
Ambient temperature
Minimum
Vo + 10
—
-3.0 (note 3)
—
—
—
—
—
(note 3)
-40
Maximum
Vo + Vclamp
500
500
0.7
0.85
0.5
0.6
1.2
5
125
Units
V
A
mA
°C
NOTE 2:
Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are
referenced to COM.
MOSFET Characteristics
Symbol Definition
trr
Qrr
Rds(on)
VSD
Reverse recovery time (MOSFET body diode)
Reverse recovery charge (MOSFET body diode)
Static drain-to-source on resistance
Diode forward voltage
Dynamic Characteristics
Symbol Definition
D
RT duty cycle
tsd
Shutdown propagation delay
Min.
—
—
—
—
Typ.
240
0.5
3.0
0.8
Max. Units Test Conditions
—
—
—
µC
di/dt =
Ω
IF=700mA
100
A/µs
—V
Min.
—
—
Typ.
50
660
Max. Units Test Conditions
—
%
— nsec
fosc = 20 kHz
4
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