IR53H420-P2 データシートの表示（PDF） - International Rectifier
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IR53H420-P2 Datasheet PDF : 8 Pages
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IR53H(D)420(-P2)
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are
referenced to COM.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+
VCCUV-
VCCUVH
IQCCUV
IQCC
VCLAMP
Rising VCC undervoltage lockout threshold
Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage
Floating Supply Characteristics
Min.
8.1
7.2
0.5
—
—
14.4
Typ.
9.0
8.0
1.0
75
500
15.6
Max.
9.9
8.8
1.5
150
950
16.8
Units Test Conditions
V
µA
VCC ≤ VCCUV-
V
ICC = 5mA
Symbol Definition
IQBSUV
IQBS
VBSMIN
IOS
VF
Micropower startup VBS supply current
Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR2153D)
Oscillator I/O Characteristics
Min.
—
—
—
Typ.
0
30
4.0
—
—
0.5
—
Max.
10
50
5.0
Units
µA
Test Conditions
VCC ≤ VCCUV-
V VCC=VCCUV+ + 0.1V
50
µA
VB = VS = 600V
1.0
V
IF = 250mA
Symbol Definition
fosc
Oscillator frequency
d
ICT
ICTUV
VCT+
VCT-
VCTSD
VRT+
RT pin duty cycle
CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, VCC - VRT
VRT- Low-level RT output voltage
VRTUV UV-mode RT output voltage
VRTSD SD-Mode RT output voltage, VCC - VRT
Min.
19.4
94
48
—
0.30
—
—
1.8
—
—
—
—
—
—
—
Typ.
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
10
Max.
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
300
Units
kHz
%
uA
mA
Test Conditions
RT = 36.9kΩ
RT = 7.43kΩ
fo < 100kHz
VCC = 7V
V
IRT = 100µA
IRT = 1mA
IRT = 100µA
mV
IRT = 1mA
VCC ≤ VCCUV-
IRT = 100µA,
VCT = 0V
IRT = 1mA,
VCT = 0V
5
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