INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF630B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 4.5A
IGSS
Gate Source Leakage Current
VGS= ±30V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD
Diode Forward Voltage
IF= 9A; VGS= 0
MIN MAX UNIT
200
V
2
4
V
0.4
Ω
±100 nA
10
uA
1.5
V
isc Website:www.iscsemi.cn