IRF820(2011) データシートの表示（PDF） - Vishay Semiconductors
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IRF820 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF820, SiHF820
Vishay Siliconix
VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
10-1
100
91059_01
4.5 V
20 µs Pulse Width
TC = 25 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
150 °C
100
25 °C
10-1
4
91059_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10-1
100
91059_02
20 µs Pulse Width
TC = 150 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 2.1 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91059_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91059
S11-0507-Rev. C, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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