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UPG103P データシートの表示(PDF) - NEC => Renesas Technology

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UPG103P Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.
This device is most suitable for the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : f = 50 MHz to 3 GHz
• Input/output impedance matched to 50
• Hermetic sealed ceramic package assures high reliability
ORDERING INFORMATION
PART NUMBER
µPG103B
PACKAGE
T-31, 8 PIN CERAMIC
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain Voltage
VDD
+8
Gate Voltage
VGG
–8
Input Voltage
Vin
–3 to +0.6
Input Power
Pin
+15
Total Power Dissipation*
Ptot
1.5
Operating Case Temperature Topt –65 to +125
Storage Temperature
Tstg
–65 to +175
* TC 125 ˚C
V
V
V
dBm
W
˚C
˚C
RECOMMENDED OPERATING CONDITIONS (TA = 25 ˚C)
Drain Voltage
VDD
+5.0±0.5
V
Gate Voltage
VGG
–5.0±0.5
V
Operating Case Temperature Topt
–50 to +80
˚C
Document No. P11342EJ1V0DS00 (1st edition)
Date Published March 1996 P
Printed in Japan
©
1996

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