KTC4375 データシートの表示（PDF） - Weitron Technology

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KTC4375

NPN EPITAXIAL PLANAR TRANSISTOR

Weitron Technology 

KTC4375

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Base Breakdown Voltage

IC=1mA,IE=0

Collector-Emitter Breakdown Voltage

IC=10mA,IB=0

Emitter-Base Breakdown Voltage

IC=0,IE=1mA

IE=0,VCB=30V

IC=0,VEB=5V

Symbol Min

Typ

BVCBO

30

-

BVCEO

30

-

BVEBO

5

-

ICBO

-

-

IEBO

-

-

Max Unit

-

V

-

V

-

V

0.1

µA

0.1

µA

ON CHARACTERISTICS

DC Current Gain

IC=0.5A,VCE=2V

Collector-Emitter Saturation Voltage

IC=1.5A, IB =30mA

Collector-Emitter Saturation Voltage

IC=0.5A, VCE =2V

hFE(1)

100

-

320

-

VCE(sat)

-

-

2

V

VBE(sat)

-

-

1

V

DYNAMIC CHARACTERISTICS

Transition Frequency

IC=0.5A,VCE=2V

Collector Output Capacitance

IE=0,VCB=10V,f=1MHz

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

O

100-200

GO

fT

-

120

-

MHz

Cob

-

-

40

pF

Y

160-320

GY

WEITRON

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http://www.weitron.com.tw

04-Feb-09

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