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L6590 データシートの表示(PDF) - STMicroelectronics

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L6590
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6590 Datasheet PDF : 23 Pages
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L6590
DESCRIPTION (continued)
The MOSFET is source-grounded, thus it is possible
to build flyback, boost and forward converters.
The device can work with secondary feedback and a
2.5V±2% internal reference, in addition to a high gain
error amplifier, makes possible also the use in appli-
cations either with primary feedback or not isolated.
The internal fixed oscillator frequency and the integrated
non dissipative start-up generator minimize the external
component count and power consumption.
The device is equipped with a standby function that
automatically reduces the oscillator frequency from
65 to 22 kHz under light load conditions to enhance
efficiency (Pin < 1W @ Pout = 0.5W with wide range
mains).
Internal protections like cycle-by-cycle current limiting,
latched output overvoltage protection, mains undervolt-
age protection (SMD version only) and thermal shut-
down generate a 'robust' design solution.
The IC uses a special leadframe with the ground pins
(6, 7 and 8 in minidip, 9 to16 in SO16W package) in-
ternally connected in order for heat to be easily re-
moved from the silicon die. An heatsink can then be
realized by simply making provision of few cm2 of
copper on the PCB. Furthermore, the pin(s) close to
the high-voltage one are not connected to ease com-
pliance with safety distances on the PCB.
BLOCK DIAGRAM
GND
(6,7,8)
PGND
[9, ..., 16]
DRAIN
(1) [1]
[x] : L6590D (SO16W)
START-UP
THERMAL
SHUTDOWN
SUPPLY
& UVLO
VREF
+
-
OVP VREF
+
- OCP
STANDBY
OSC
65/22 kHz
BROWNOUT
+
PWM
-
2.5V
-
+
2.5V
VCC
(3) [4]
SGND
[5]
BOK
[6]
VFB
(5) [8]
COMP
(4) [7]
PIN CONNECTIONS (Top view)
DRAIN
N.C.
Vcc
COMP
MINIDIP
L6590
GND
GND
GND
VFB
DRAIN
N.C.
N.C.
Vcc
SGND
BOK
COMP
VFB
SO16W
L6590D
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
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