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LL4448 データシートの表示(PDF) - GOOD-ARK
部品番号
コンポーネント説明
メーカー
LL4448
SILICON EPITAXIAL PLANAR DIODE
GOOD-ARK
LL4448 Datasheet PDF : 4 Pages
1
2
3
4
Characteristics
at
T
j
=25
Forward voltage
at
at
II
FF
==150m0AmA
Leakage current
at
at
at
VVV
RRR
===227005VVV,
T
j
=150
Reverse breakdown voltage
tested with 100uA pulses
Capacitance
at V
F
=V
R
=0
Reverse recovery time
from I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
Thermal resistance
junction to ambient Air
Rectification efficiency
at f=100MHz, V
RF
=2V
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Symbols
VV
FF
III
RRR
V
(BR)R
C
tot
t
rr
R
thA
V
Min.
0.62
-
-
-
-
100
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
0.72
1
25
5
50
-
4
4
0.35
1)
-
Units
Volt
Volt
nA
uA
uA
Volts
F
nS
K/mW
-
Rectification efficiency measurement circuit
2
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