LND150N8(2001) データシートの表示（PDF） - Supertex Inc
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LND150N8 Datasheet PDF : 4 Pages
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Thermal Characteristics
Package
TO-92
ID (continuous)*
30mA
ID (pulsed)
30mA
Power Dissipation
@TA = 25°C
0.74W
TO-243AA
30mA
30mA
1.6W†
* ID (continuous) is limited by max rated Tf.
† Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θjc
°C/W
125
31
θja
°C/W
170
105†
IDR
30mA
30mA
LND150
IDRM*
30mA
30mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSX Drain-to-Source Breakdown Voltage
500
VGS(OFF) Gate-to-Source OFF Voltage
-1.0
∆VGS(OFF) Change in VGS(OFF) with Temperature
IGSS
Gate Body Leakage Current
ID(OFF) Drain-to-Source Leakage Current
V
-3.0
V
5.0 mV/°C
100
nA
100
nA
100
µA
IDSS
Saturated Drain-to-Source Current
1.0
3.0
RDS(ON) Static Drain-to-Source ON-State Resistance
850 1000
∆RDS(ON) Change in RDS(ON) with Temperature
1.2
GFS
Forward Transconductance
1.0
2.0
CISS
Input Capacitance
7.5
10
COSS
Output Capacitance
2.0
3.5
CRSS
Reverse Transfer Capacitance
0.5
1.0
td(ON)
Turn-ON Delay Time
0.09
tr
Rise Time
0.45
td(OFF) Turn-OFF Delay Time
0.1
tf
Fall Time
1.3
VSD
Diode Forward Voltage Drop
0.9
trr
Reverse Recovery Time
200
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
%/°C
m
pF
µs
V
ns
Conditions
VGS = -10V, ID = 1.0mA
VDS = 25V, ID = 100nA
VDS = 25V, ID = 100nA
VGS = ±20V, VDS = 0V
VGS = -10V, VDS = 450V
VGS = -10V, VDS = 0.8V max rating
TA =125°C
VGS = 0V, VDS = 25V
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 1.0mA
VGS = -10V, VDS = 25V
f = 1 MHz
VDD = 25V, ID = 1.0mA,
RGEN = 25Ω
VGS = -10V, ISD = 1.0mA
VGS = -10V, ISD = 1.0mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
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