M1MA151AT1 データシートの表示（PDF） - Motorola => Freescale
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M1MA151AT1 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
• Fast trr, < 3.0 ns
• Low CD, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
ANODE
3
Order this document
by M1MA151AT1/D
M1MA151AT1
M1MA152AT1
Motorola Preferred Devices
SC–59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
1
CATHODE NO CONNECTION
Value
Unit
Reverse Voltage
M1MA151AT1
VR
M1MA152AT1
40
Vdc
80
Peak Reverse Voltage
M1MA151AT1
M1MA152AT1
VRM
40
Vdc
80
Forward Current
Peak Forward Current
Peak Forward Surge Current
IF
IFM
IFSM(1)
100
mAdc
225
mAdc
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
mW
TJ
150
°C
Tstg
– 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Reverse Voltage Leakage Current M1MA151AT1
IR
M1MA152AT1
Forward Voltage
Reverse Breakdown Voltage
VF
M1MA151AT1
VR
M1MA152AT1
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. trr Test Circuit
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
3
2
1
CASE 318D–03, STYLE 4
SC–59
Min
Max
Unit
—
0.1
µAdc
—
0.1
—
1.2
Vdc
40
—
Vdc
80
—
—
2.0
pF
—
3.0
ns
1
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