M29DW323DB70ZE1 データシートの表示（PDF） - Numonyx -> Micron

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M29DW323DB70ZE1

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

Numonyx -> Micron 

M29DW323DT

M29DW323DB

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase

and Read

– VPP =12V for Fast Program (optional)

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

– Double Word/ Quadruple Byte Program

■ MEMORY BLOCKS

– Dual Bank Memory Array: 8Mbit+24Mbit

– Parameter Blocks (Top or Bottom

Location)

■ DUAL OPERATIONS

– Read in one bank while Program or Erase

in other

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ VPP/WP PIN for FAST PROGRAM and

WRITE PROTECT

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to

store additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29DW323DT: 225Eh

– Bottom Device Code M29DW323DB:

225Fh

Figure 1. Packages

TSOP48 (N)

12 x 20mm

FBGA

TFBGA48 (ZE)

6 x 8mm

March 2008

1/51

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