M29F200BB データシートの表示（PDF） - Micron Technology

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M29F200BB

2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory

Micron Technology 

M29F200BT

M29F200BB

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

Single Supply Flash Memory

Features

■ Single 5V±10% supply voltage for Program,

Erase and Read operations

■ Access time: 45, 50, 70, 90ns

■ Programming time

– 8µs per Byte/Word typical

■ 7 memory blocks

– 1 Boot Block (Top or Bottom location)

– 2 parameter and 4 main blocks

■ Program/Erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase

algorithm

– Status Register polling and toggle bits

– Ready/Busy output pin

■ Erase Suspend and Resume modes

– Read and Program another block during

Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Temporary Block Unprotection mode

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ 20 years data retention

– Defectivity below 1 ppm/year

■ Electronic Signature

– Manufacturer code: 0020h

– Top Device code M29F200BT: 00D3h

– Bottom Device code: M29F200BB: 00D4h

■ ECOPACK® packages available

TSOP48 (N)

12 x 20mm

44

1

SO44 (M)

March 2007

Rev 5

1/39

www.st.com

1

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