M5M51R16AWG-10H データシートの表示（PDF） - MITSUBISHI ELECTRIC

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M5M51R16AWG-10H

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M51R16AWG -10L, -12L, -15L,

-10H, -12H, -15H

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

POWER DOWN CHARACTERISTICS

(1) ELECTRICAL CHARACTERISTICS ( Ta = 0 ~ 70°C, unless otherwise noted )

Symbol

Parameter

Vcc(PD) Power down supply voltage

VI(S) Chip select input S

Test conditions

1.8V ≤ Vcc(PD)

1.0V ≤ Vcc(PD) ≤ 1.8V

Limits

Min

Typ

Max Unit

1.0

V

0.7 x Vcc

V

Vcc(PD)

VI(BC)

Byte control inputs BC1 and

BC2

1.8V ≤ Vcc(PD)

1.0V ≤ Vcc(PD) ≤ 1.8V

0.7 x Vcc

V

Vcc(PD)

Vcc = 2.0V

1) S ≥ Vcc - 0.2V

-L

ICC(PD) Power down supply current

other inputs = 0~Vcc

2) BC1 and BC2 ≥ Vcc - 0.2V

-H

S ≤ 0.2V,other inputs = 0~Vcc

2

µA

0.05

1

(2) TIMING REQUIREMENTS ( Ta = 0 ~ 70°C, unless otherwise noted )

Symbol

Parameter

tsu(PD) Power down set up time

trec(PD) Power down recovery time

Test conditions

Limits

Unit

Min Typ Max

0

ns

5

ms

(3) POWER DOWN CHARACTERISTICS

S control mode

Vcc

tsu(PD)

0.7 x Vcc

S

1.8V

S ≥ Vcc

1.8V

trec(PD)

0.7 x Vcc

BC1 and BC2 control mode

Vcc

tsu(PD)

0.7 x Vcc

BC1 and BC2

1.8V

1.8V

BC1 and BC2 ≥ Vcc

trec(PD)

0.7 x Vcc

Aug.1. 1998

MITSUBISHI

ELECTRIC

7

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