M63812P データシートの表示（PDF） - MITSUBISHI ELECTRIC
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M63812P Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30
Ta = 25°C
20
Ta = 85°C
Ta = –40°C
10
00
2
4
6
8 10 12
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
Ta = 25°C
50
Ta = –40°C
0
0
0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
200
150
Ta = 85°C
100
50
Ta = 25°C
Ta = –40°C
0
0
4
8
12 16
20
Input voltage VI (V)
Jan. 2000
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