M68701 データシートの表示（PDF） - MITSUBISHI ELECTRIC

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M68701

SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO

MITSUBISHI ELECTRIC  

MITSUBISHI RF POWER MODULE

M68701

SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO

OUTLINE DRAWING

Dimensions in mm

BLOCK DIAGRAM

60.5±1

57.5±0.5

50.4±1

2-R1.6+0.02

1

2

3

0.45±0.2

8.3±1

21.3±1

43.3±1

51.3±1

45

2

1

PIN:

1 Pin : RF INPUT

2 VGG : GATE BIAS SUPPLY

3 VDD : DRAIN BIAS SUPPLY

4 PO : RF OUTPUT

5 GND: FIN

3

4

5

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Symbol

Parameter

VDD

Supply voltage

VGG

Gate bias voltage

Pin

Input power

PO

Output power

TC (OP) Operation case temperature

Tstg

Storage temperature

Note. Above parameters are guaranteed independently.

Conditions

VGG≤3.5V, ZG=ZL=50Ω

f=820-851MHz, ZG=ZL=50Ω

f=820-851MHz, ZG=ZL=50Ω

f=820-851MHz, ZG=ZL=50Ω

ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)

Symbol

Parameter

Test conditions

f

PO

ηT

2fO

ρin

-

Frequency range

Output power

Total efficiency

2nd. harmonic

Input VSWR

Stability

VDD=12.5V,

VGG=5V,

Pin=1mW

ZG=ZL=50Ω, VDD=10-16V,

Load VSWR<4:1

-

Load VSWR tolerance

VDD=15.2V, Pin=1mW,

PO=6W (VGG adjust), ZL=20:1

Note. Above parameters, ratings, limits and test conditions are subject to change.

Ratings

Unit

17

V

5.5

V

10

mW

10

W

-30 to +100

°C

-40 to +100

°C

Limits

Min

Max

820

851

6

35

-30

4

No parasitic oscillation

No degradation or

destroy

Unit

MHz

W

%

dBc

-

-

-

Nov. ´97

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