MITSUBISHI RF POWER MODULE
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
100
9
90
PO
8
80
7
VDD=12.5V 70
6
VGG=5V
Pin=1mW
60
5
ηT
ZG=ZL=50Ω 50
4
40
3
30
2
ρin
20
1
10
0
0
790 800 810 820 830 840 850 860 870 880
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
f=820MHz
VDD=12.5V
VGG=5V
ZG=ZL=50Ω
PO
10.0
1000
100
ηT
1.0
10
0.1
1
-30 -25 -20 -15 -10 -5 0 5 10
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
f=851MHz
1000
VDD=12.5V
VGG=5V
10.0
PO
100
ηT
1.0
10
0.1
1
-30 -25 -20 -15 -10 -5 0 5 10
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
100
f=820MHz
9 VDD=12.5V
90
8 Pin=1mW
ZG=ZL=50Ω
7
80
PO
70
6
60
5
50
4
ηT
40
3
30
2
20
1
10
0
0
3.0 3.4 3.8 4.2 4.6 5.0
3.2 3.6 4.0 4.4 4.8
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
100
f=851MHz
9 VDD=12.5V
8 Pin=1mW
ZG=ZL=50Ω
7
90
PO
80
70
6
60
5
50
4
ηT
40
3
30
2
20
1
10
0
0
3.0 3.4 3.8 4.2 4.6 5.0
3.2 3.6 4.0 4.4 4.8
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
18
90
f=820MHz
16 VGG=5V
80
14
Pin=1mW
ZG=ZL=50Ω
12
70
PO
60
10
50
8
40
ηT
6
30
4
20
2
10
0
0
4 6 8 10 12 14 16 18
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97