MAC210A8 データシートの表示（PDF） - ON Semiconductor
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MAC210A8 Datasheet PDF : 6 Pages
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MAC210A8, MAC210A10
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.0
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
−
−
10
mA
−
−
2.0
mA
Peak On-State Voltage
(ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
−
1.2 1.65
V
IGT
mA
−
12
50
−
12
50
−
20
50
−
35
75
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
V
−
0.9 2.0
−
0.9 2.0
−
1.1 2.0
−
1.4 2.5
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA, TC = +25°C)
Turn-On Time
(Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
DYNAMIC CHARACTERISTICS
VGD
0.2
−
−
V
IH
−
6.0 50
mA
tgt
−
1.5
−
ms
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)
dv/dt(c)
−
5.0
−
V/ms
dv/dt
−
100
−
V/ms
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