MBD110DWT1 データシートの表示（PDF） - E-Tech Electronics LTD
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MBD110DWT1 Datasheet PDF : 5 Pages
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS — MBD110DWT1
1.0
100
0.7
0.5
0.2
10
0.1
0.07
1.0
0.05
0.02
0.01
0.1
30 40 50 60 70 80 90 100 110 120 130
0.3
0.4
0.5
0.6
0.7
0.8
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
0.9
0.8
0.7
0.6
0
1.0
2.0
3.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Figure 5. Noise Figure Test Circuit
11
10
9
8
7
6
5
4
3
2
1
4.0
0.1
0.2
0.5
1.0
2.0
5.0
10
P LO , LOCAL OSCILLATOR POWER (mW)
Figure 4. Noise Figure
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – C C and C T are measured using a capaci-
tance bridge (Boonton Electronics Model 75A
or equivalent).
Note 2 – Noise figure measured with diode under
test in tuned diode mount using UHF noise
source and local oscillator (LO) frequency of
1.0 GHz. The LO power is adjusted for 1.0
mW. I F amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 – L S is measured on a package having a
short instead of a die, using an impedance
bridge (Boonton Radio Model 250A RX Meter).
MBD110–3/5
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