MBR10100CT データシートの表示（PDF） - Kersemi Electronic Co., Ltd.
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MBR10100CT Datasheet PDF : 2 Pages
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Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +175°C
Microsemi
Device Maximum
Catalog
Marking Recurrent
Number
Peak
Reverse
Voltage
MBR1080CT MBR1080CT 80V
MBR10100CT MBR10100CT 100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
56V
80V
70V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
10A TC = 100°C
Peak Forward Surge
IFSM
Current
Maximum Forward
Voltage Drop Per
Element
VF
120A 8.3ms, half sine
.85V
.75V
IFM = 5A
TJ = 25°C
TJ = 125°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
0.2mA TJ = 25°C
15mA TJ = 125°C
Typical Junction
Capacitance
CJ
300pF Measured at
1.0MHz, VR=4.0V
MBR1080CT
THRU
MBR10100CT
10 Amp
Schottky Barrier
Rectifier
80-100 Volts
TO-220AB
B
L
M
C
D
K
A
E
PIN
12 3
F
I
HH
PIN 1
PIN 3
G
J
N
PIN 2
CASE
INCHES
MM
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
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