MBR2535CT(2008) データシートの表示（PDF） - Sirectifier Electronics
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MBR2535CT Datasheet PDF : 2 Pages
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MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ = 125 C
10.0
10
TJ = 150 C
1.0
TJ = 75 C
1.0
TJ = 25 C
0.1
TJ = 25 C
0.01
0.001
0
20
40
60 80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.1
0.01
0
PULSE WIDTH 300us
2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
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