MBRF20200CT データシートの表示（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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MBRF20200CT Datasheet PDF : 2 Pages
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Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop, low swithing losses
High surge capacity
For use in low voltage, high frequency inverters free
wheeling, and polarity protection applications
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case: JEDEC ITO-220AB, molded plastic body
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MBRF20150CT-MBR20200CT
Schottky Barrier Rectifiers
Reverse Voltage: 150---200V
Forward Current: 20A
ITO-220AB
10.2± 0.2
4.5± 0.2
3.1+-00..12
PIN
1 23
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.15
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Symbol
MBRF20150CT
MBRF20200CT
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward tolal device
rectified current @TC=100°C
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage @10A
Maximum reverse current @TA=25°C
at rated DC blocking voltage @TA=100°C
Maximum thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
VRRM
VRWS
VDC
I(AV)
IFSM
VF
IR
RθJC
TJ
TSTG
NOTES: 1. Thermal resistance from junction to case.
150
200
135
140
150
200
20
150
0.95
0.2
50
1.5
-55 --- +150
-55 --- +150
UNITS
V
V
V
A
A
V
mA
°C/W
°C
°C
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mail:lge@luguang.cn
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