MBT3904DW2T1 データシートの表示（PDF） - ON Semiconductor

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MBT3904DW2T1

Dual General Purpose Transistors

ON Semiconductor 

MBT3904DW1T1, MBT3904DW2T1

SWITCHING CHARACTERISTICS

Characteristic

Delay Time

Rise Time

Storage Time

Fall Time

(VCC = 3.0 Vdc, VBE = -ā0.5 Vdc)

(IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc, IC = 10 mAdc)

(IB1 = IB2 = 1.0 mAdc)

Symbol Min

td

-

tr

-

ts

-

tf

-

Max

Unit

35

ns

35

200

ns

50

DUTY CYCLE = 2%

300 ns

-ā0.5 V

+10.9 V

10 k

< 1 ns

+3 V

275

10 < t1 < 500 ms

t1

DUTY CYCLE = 2%

Cs < 4 pF*

0

-ā9.1 V′

+10.9 V

10 k

1N916

< 1 ns

+3 V

275

Cs < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

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