MC-458CA721ESA-A80 データシートの表示（PDF） - NEC => Renesas Technology

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MC-458CA721ESA-A80

8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

NEC => Renesas Technology 

MC-458CA721ESA, 458CA721PSA

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Symbol

Condition

Rating

Unit

Voltage on power supply pin relative to GND

VCC

Voltage on input pin relative to GND

VT

Short circuit output current

IO

Power dissipation

PD

Operating ambient temperature

TA

Storage temperature

Tstg

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

5

W

0 to 70

°C

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Supply voltage

High level input voltage

Low level input voltage

Operating ambient temperature

Symbol

VCC

VIH

VIL

TA

Condition

MIN.

3.0

2.0

–0.3

0

TYP. MAX. Unit

3.3

3.6

V

VCC + 0.3 V

+0.8

V

70

°C

Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Input capacitance

Data input/output capacitance

Symbol

Test condition

MIN. TYP. MAX. Unit

CI1 A0 - A11, BA0(A13), BA1(A12), 17

/RAS, /CAS, /WE

CI2

CLK0

23

34

pF

37

CI3

CKE0

18

30

CI4

/CS0

18

30

CI5 DQMB0 - DQMB7

5

16.5

CI/O DQ0 - DQ63, CB0 - CB7

5

13

pF

Data Sheet M14494EJ2V0DS00

5

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