MC78BC00(2006) データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

MC78BC00
(Rev.:2006)

Micropower Voltage Regulator

ON Semiconductor 

MC78BC00 Series

MAXIMUM RATINGS (TC = 25°C, unless otherwise noted.)

Rating

Symbol

Value

Unit

Input Voltage

VCC

10

Vdc

Power Dissipation and Thermal Characteristics Maximum Power Dissipation

Case 1212 (SOT−23) H Suffix

Thermal Resistance, Junction−to−Ambient

PD

RqJA

mW

150

333

°C/W

Operating Junction Temperature

TJ

125

°C

Operating Ambient Temperature

TA

−30 to +80

°C

Storage Temperature Range

Tstg

−40 to +125

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

NOTE: ESD data available upon request.

ELECTRICAL CHARACTERISTICS (Vin = VO + 1.0 V, IO = 50 mA, TJ = 25°C 9 (Note 2), unless otherwise noted.)

Characteristic

Symbol

Min Typ Max Unit

Output Voltage

VO

MC78BC30NTR

MC78BC31NTR

MC78BC33NTR

MC78BC40NTR

MC78BC43NTR

MC78BC45NTR

MC78BC50NTR

V

2.925 3.0 3.075

3.023 3.1 3.178

3.218 3.3 3.382

3.900 4.0 4.100

4.193 4.3 4.408

4.386 4.5 4.613

4.875 5.0 5.125

Line Regulation

VO + 0.5 V ≤ Vin ≤ 8.0 V

Load Regulation

Vin − VO = 1.0 V

1.0 mA ≤ lO ≤ 100 mA

Output Current (Note 3) Vin − VO = 1.0 V

Dropout Voltage

IO = 100 mA

Supply Current

Vin = 8.0 V

Vin − VO = 1.0 V

IO = 0 (at no load)

Supply Current (Standby) Vin = 8.0 V

Ext Leakage Current

Chip Enable Input Logic Voltage

Logic “0” (Regulator “On”)

Logic “1” (Regulator “Off”)

Regline

Regload

lO

Vin − VO

lss

0

0.1

0.3

mV

−

40

60

mV

−

1000

−

mA

−

100 200

mV

−

50

80

mA

lstandby

lLK

VCE

0.1

0.2

1.0

mA

−

−

0.5

mA

V

0

−

0.25

1.5

−

8.0

Chip Enable Input Current

VCE = 0.25 V

VCE = 1.5 V

lCEL

mA

−5.0 −3.0 −0.1

−

−

0.1

Output Voltage Temperature Coefficient

TC

−

±100

− ppm/°C

2. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.

3. The output current depends upon the performance of External PNP Transistor. Use External PNP Transistor of a low saturation type, with

an HFE of 100 or more.

DEFINITIONS

Dropout Voltage − The input/output voltage differential at

which the regulator output no longer maintains regulation

against further reductions in input voltage. Measured when

the output drops 100 mV below its nominal value (which is

measured at 1.0 V differential), dropout voltage is affected by

junction temperature, load current and minimum input supply

requirements.

Line Regulation − The change in output voltage for a change

in input voltage. The measurement is made under conditions

of low dissipation or by using pulse techniques such that

average chip temperature is not significantly affected.

Load Regulation − The change in output voltage for a change

in load current at constant chip temperature.

Maximum Power Dissipation − The maximum total device

dissipation for which the regulator will operate within

specifications.

Supply Current − Current which is used to operate the

regulator chip and is not delivered to the load.

http://onsemi.com

2

Share Link: