MCR8N データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
MCR8N Datasheet PDF : 5 Pages
| |||
MCR8N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note )
(ITM = 16 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V; RL = 100 W)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current
(VD = 12 V, IG = 15 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V; 100 W)
TJ = 25°C
Gate Non−Trigger Voltage
(VD = 12 V; RL = 100 W)
TJ = 125°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
Symbol Min Typ Max Unit
IDRM,
IRRM
mA
−
− 0.01
−
−
2.0
VTM
−
−
1.8
V
IGT
2.0 7.0 15
mA
IH
4.0 17
30
mA
IL
6.0 20
40
mA
VGT
0.5 0.65 1.0
V
VGD
0.2
−
−
V
dv/dt
di/dt
100 250
−
V/ms
−
−
50 A/ms
http://onsemi.com
2
Share Link: 